Title:
Chemical and Mechanical Adhesion Mechanisms of Sputter-Deposited Metal on Epoxy Dielectric for High Density Interconnect Printed Circuit Boards

dc.contributor.author Wong, C. P.
dc.contributor.author Martin, Lara J.
dc.date.accessioned 2006-08-10T12:51:18Z
dc.date.available 2006-08-10T12:51:18Z
dc.date.issued 2001-09
dc.description ©2001 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or distribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. en
dc.description.abstract Strong chemical reactions between metal and polymer substrates significantly enhance adhesion of the metal to the polymer. This study investigated the adhesion of three types of thin film metals, including Cu, NiCr, and Cr, to a fully epoxy-based polymer. Before depositing these thin film metals, the epoxy surface was treated with either an Ar or O [subscript 2] plasma etch. It was found that NiCr and Cr produced higher peel strengths than Cu, but NiCr and Cr did not produce different peel strengths than each other. It was also found that O[subscript 2 ] plasma etch produced significantly higher peel strengths than Ar plasma etch for Cu and Cr, but not for NiCr. An XPS (X-ray photoelectron spectroscopy) study was performed to investigate the reactivities and possible chemical adhesion mechanisms of the metal thin films with the epoxy. It was determined that Cr reacted more strongly than Ni in forming metal oxide at the metal-epoxy interface. Cu was not seen to react strongly in forming oxide with the epoxy. Thermodynamic information supported the relative amounts of oxides found by XPS. Thermodynamic information also suggested that O [subscript 2] plasma etch did not produce significantly higher adhesion than Ar plasma etch on the NiCr samples due to the large Ni component of the NiCr thin film. An AFM (atomic force microscopy) study was performed to investigate possible mechanical adhesion mechanisms. Implications of the AFM results were that the main adhesion mechanism for all samples was chemical and that the Cu oxide that was available on the Cu samples was beyond the detection limits of the XPS equipment. en
dc.format.extent 320451 bytes
dc.format.mimetype application/pdf
dc.identifier.citation IEEE Transactions on Components and Packaging Technologies, Vol. 24, no. 3, September 2001, 416-424
dc.identifier.uri http://hdl.handle.net/1853/11284
dc.language.iso en_US en
dc.publisher Georgia Institute of Technology en
dc.publisher.original Institute of Electrical and Electronics Engineers, Inc., New York
dc.subject Adhesion mechanism en
dc.subject Atomic force microscopy en
dc.subject Build up en
dc.subject Chemical en
dc.subject Design of experiments en
dc.subject Dielectric en
dc.subject Epoxy en
dc.subject Gibbs free energy of formation en
dc.subject High density interconnect en
dc.subject Interconnect substrate en
dc.subject Mechanical adhesion mechanism
dc.subject Metallize
dc.subject Printed circuit board
dc.subject Scanning electron microscopy
dc.subject Sputter
dc.subject Standards
dc.subject Statistical tools/methodology
dc.subject Vacuum deposit
dc.subject X-ray photoelectron spectroscopy
dc.title Chemical and Mechanical Adhesion Mechanisms of Sputter-Deposited Metal on Epoxy Dielectric for High Density Interconnect Printed Circuit Boards en
dc.type Text
dc.type.genre Article
dspace.entity.type Publication
local.contributor.author Wong, C. P.
local.contributor.corporatename School of Materials Science and Engineering
local.contributor.corporatename College of Engineering
relation.isAuthorOfPublication 76540daf-1e96-4626-9ec1-bc8ed1f88e0a
relation.isOrgUnitOfPublication 21b5a45b-0b8a-4b69-a36b-6556f8426a35
relation.isOrgUnitOfPublication 7c022d60-21d5-497c-b552-95e489a06569
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