Porous Gas Sensors And Method Of Preparation Thereof

dc.contributor.patentcreator Gole, James L.
dc.contributor.patentcreator Seals, Lenward T.
dc.contributor.patentcreator Hesketh, Peter J.
dc.date.accessioned 2017-05-12T14:28:54Z
dc.date.available 2017-05-12T14:28:54Z
dc.date.filed 1/24/2005
dc.date.issued 11/23/2010
dc.description.abstract A sensor is disclosed. A representative sensor includes a silicon substrate having a porous silicon region. A portion of the porous silicon region has a front contact is disposed thereon. The contact resistance between the porous silicon region and the front contact is between about 10 ohms and 100 ohms.
dc.description.assignee Georgia Tech Research Corporation
dc.identifier.cpc G01N27/127
dc.identifier.patentapplicationnumber 11/041358
dc.identifier.patentnumber 7838949
dc.identifier.uri http://hdl.handle.net/1853/57903
dc.identifier.uspc 257/414
dc.title Porous Gas Sensors And Method Of Preparation Thereof
dc.type Text
dc.type.genre Patent
dspace.entity.type Publication
local.contributor.corporatename Georgia Institute of Technology
local.relation.ispartofseries Georgia Tech Patents
relation.isOrgUnitOfPublication cc30e153-7a64-4ae2-9b1d-5436686785e3
relation.isSeriesOfPublication 0f49c79d-4efb-4bd9-b060-5c7f9191b9da
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