Title:
Low-voltage C-60 organic field-effect transistors with high mobility and low contact resistance
Low-voltage C-60 organic field-effect transistors with high mobility and low contact resistance
| dc.contributor.author | Kippelen, Bernard | en_US |
| dc.contributor.author | Zhang, Xiaohong | en_US |
| dc.contributor.corporatename | Georgia Institute of Technology. Center for Organic Photonics and Electronics | en_US |
| dc.contributor.corporatename | Georgia Institute of Technology. School of Electrical and Computer Engineering | en_US |
| dc.date.accessioned | 2012-12-14T14:52:42Z | |
| dc.date.available | 2012-12-14T14:52:42Z | |
| dc.date.issued | 2008-09-29 | |
| dc.description | © 2008 American Institute of Physics. The electronic version of this article is the complete one and can be found at: http://dx.doi.org/10.1063/1.2993349 | en_US |
| dc.description | DOI: 10.1063/1.2993349 | en_US |
| dc.description.abstract | State-of-the-art C60 organic transistors are reported here by engineering the essential electrode/semiconductor and dielectric/semiconductor interfaces. By using calcium (Ca) as the source and drain electrodes, the width-normalized contact resistance (RCW) at the electrode/semiconductor interface could be reduced to a constant value of 2 k Ω cm at a gate-source voltage (V-GS) of 2.6 V, for devices with channel lengths ranging from 25 to 200 µm. Channel transconductance is observed to follow channel length scaling, and charge mobility average value of 2.5 cm(2)/Vs at VGS < 5 V is found independent of channel length within the studied range. | en_US |
| dc.identifier.citation | Zhang, X. -H. and Kippelen, Bernard, "Low-voltage C-60 organic field-effect transistors with high mobility and low contact resistance," Applied Physics Letters, 93, 13, 133305 (September 29 2008) | en_US |
| dc.identifier.doi | 10.1063/1.2993349 | |
| dc.identifier.issn | 1077-3118 | |
| dc.identifier.uri | http://hdl.handle.net/1853/45547 | |
| dc.language.iso | en_US | en_US |
| dc.publisher | Georgia Institute of Technology | en_US |
| dc.publisher.original | American Institute of Physics | en_US |
| dc.subject | Contact resistance | en_US |
| dc.subject | Fullerene devices | en_US |
| dc.subject | Fullerenes | en_US |
| dc.subject | High electron mobility transistors | en_US |
| dc.subject | Semiconductor-insulator boundaries | en_US |
| dc.title | Low-voltage C-60 organic field-effect transistors with high mobility and low contact resistance | en_US |
| dc.type | Text | |
| dc.type.genre | Article | |
| dspace.entity.type | Publication | |
| local.contributor.author | Kippelen, Bernard | |
| local.contributor.corporatename | Center for Organic Photonics and Electronics | |
| relation.isAuthorOfPublication | 89dff3fa-f69f-48dc-a1b2-89e73be81537 | |
| relation.isOrgUnitOfPublication | 43f8dc5f-0678-4f07-b44a-edbf587c338f |
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