Title:
Low-voltage C-60 organic field-effect transistors with high mobility and low contact resistance
Low-voltage C-60 organic field-effect transistors with high mobility and low contact resistance
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Kippelen, Bernard
Zhang, Xiaohong
Zhang, Xiaohong
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Abstract
State-of-the-art C60 organic transistors are reported here by engineering the essential electrode/semiconductor and dielectric/semiconductor interfaces. By using calcium (Ca) as the source and drain electrodes, the width-normalized contact resistance (RCW) at the electrode/semiconductor interface could be reduced to a constant value of 2 k Ω cm at a gate-source voltage (V-GS) of 2.6 V, for devices with channel lengths ranging from 25 to 200 µm. Channel transconductance is observed to follow channel length scaling, and charge mobility average value of 2.5 cm(2)/Vs at VGS < 5 V is found independent of channel length within the studied range.
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2008-09-29
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