Title:
Growth, fabrication, and characterization of III-nitride semiconductors for high-performance ultraviolet avalanche photodiodes by metalorganic chemical vapor deposition
Growth, fabrication, and characterization of III-nitride semiconductors for high-performance ultraviolet avalanche photodiodes by metalorganic chemical vapor deposition
| dc.contributor.advisor | Dupuis, Russell D. | |
| dc.contributor.author | Ji, Mihee | |
| dc.contributor.committeeMember | Shen, Shyh-Chiang | |
| dc.contributor.committeeMember | Yoder, Paul Douglas | |
| dc.contributor.committeeMember | Tummala, Rao | |
| dc.contributor.committeeMember | Ryou, Jae-Hyun | |
| dc.contributor.department | Electrical and Computer Engineering | |
| dc.date.accessioned | 2018-05-31T18:14:10Z | |
| dc.date.available | 2018-05-31T18:14:10Z | |
| dc.date.created | 2018-05 | |
| dc.date.issued | 2018-04-05 | |
| dc.date.submitted | May 2018 | |
| dc.date.updated | 2018-05-31T18:14:10Z | |
| dc.description.abstract | The objective of the proposed research is to develop high-performance III-nitride-based ultraviolet (UV) avalanche photodiodes (APDs) with high optical gain and low leakage current using metalorganic chemical vapor deposition (MOCVD) system. However, the realization of high-performance UV-APDs has been hampered by high dislocation densities originating from heteroepitaxial layer grown on the lattice- and thermal-mismatched substrates, resulting in higher dark current density, device size limitation, and device failure by microplasma formation as well as low yield and non-uniformity in an array format. To achieve high-performance UV-APDs and arrays, material growth on bulk GaN substrates with low dislocation density, sophisticated device fabrication process including low-damage etching and high-quality dielectric passivation, and new UV-APD structure by employing impact-ionization engineering were discussed in this research. The major aims of the research are as follows: 1) to improve characteristics of 5% AlGaN p-i-n UV-APDs 2) to demonstrate uniform and reliable GaN p-i-n UV-APD arrays with large detection area 3) to demonstrate GaN p-i-p-i-n separate absorption and multiplication (SAM) UV-APDs. | |
| dc.description.degree | Ph.D. | |
| dc.format.mimetype | application/pdf | |
| dc.identifier.uri | http://hdl.handle.net/1853/59883 | |
| dc.language.iso | en_US | |
| dc.publisher | Georgia Institute of Technology | |
| dc.subject | Metalorganic chemical vapor deposition (MOCVD) | |
| dc.subject | Ultraviolet (UV) avalanche photodiodes (APDs) | |
| dc.title | Growth, fabrication, and characterization of III-nitride semiconductors for high-performance ultraviolet avalanche photodiodes by metalorganic chemical vapor deposition | |
| dc.type | Text | |
| dc.type.genre | Dissertation | |
| dspace.entity.type | Publication | |
| local.contributor.advisor | Dupuis, Russell D. | |
| local.contributor.corporatename | School of Electrical and Computer Engineering | |
| local.contributor.corporatename | College of Engineering | |
| relation.isAdvisorOfPublication | 22f6625a-f5ee-44d3-b9ba-932c2994c5e4 | |
| relation.isOrgUnitOfPublication | 5b7adef2-447c-4270-b9fc-846bd76f80f2 | |
| relation.isOrgUnitOfPublication | 7c022d60-21d5-497c-b552-95e489a06569 | |
| thesis.degree.level | Doctoral |