Title:
Growth, fabrication, and characterization of III-nitride semiconductors for high-performance ultraviolet avalanche photodiodes by metalorganic chemical vapor deposition
Growth, fabrication, and characterization of III-nitride semiconductors for high-performance ultraviolet avalanche photodiodes by metalorganic chemical vapor deposition
Authors
Ji, Mihee
Authors
Advisors
Dupuis, Russell D.
Advisors
Associated Organizations
Organizational Unit
Organizational Unit
Series
Collections
Supplementary to
Permanent Link
Abstract
The objective of the proposed research is to develop high-performance III-nitride-based ultraviolet (UV) avalanche photodiodes (APDs) with high optical gain and low leakage current using metalorganic chemical vapor deposition (MOCVD) system. However, the realization of high-performance UV-APDs has been hampered by high dislocation densities originating from heteroepitaxial layer grown on the lattice- and thermal-mismatched substrates, resulting in higher dark current density, device size limitation, and device failure by microplasma formation as well as low yield and non-uniformity in an array format. To achieve high-performance UV-APDs and arrays, material growth on bulk GaN substrates with low dislocation density, sophisticated device fabrication process including low-damage etching and high-quality dielectric passivation, and new UV-APD structure by employing impact-ionization engineering were discussed in this research. The major aims of the research are as follows: 1) to improve characteristics of 5% AlGaN p-i-n UV-APDs 2) to demonstrate uniform and reliable GaN p-i-n UV-APD arrays with large detection area 3) to demonstrate GaN p-i-p-i-n separate absorption and multiplication (SAM) UV-APDs.
Sponsor
Date Issued
2018-04-05
Extent
Resource Type
Text
Resource Subtype
Dissertation