Title:
Leaky surface acoustic waves in Z-LiNbO ₃ substrates with epitaxial AlN overlays
Leaky surface acoustic waves in Z-LiNbO ₃ substrates with epitaxial AlN overlays
| dc.contributor.author | Bu, G. | en_US |
| dc.contributor.author | Ciplys, D. | en_US |
| dc.contributor.author | Shur, M. S. | en_US |
| dc.contributor.author | Namkoong, G. | en_US |
| dc.contributor.author | Doolittle, William Alan | en_US |
| dc.contributor.author | Hunt, William D. | en_US |
| dc.contributor.corporatename | Georgia Institute of Technology. Center for Organic Photonics and Electronics | en_US |
| dc.contributor.corporatename | Rensselaer Polytechnic Institute. Electrical, Computer, and Systems Engineering Dept. | en_US |
| dc.contributor.corporatename | Georgia Institute of Technology. School of Electrical and Computer Engineering | en_US |
| dc.date.accessioned | 2013-04-11T20:22:43Z | |
| dc.date.available | 2013-04-11T20:22:43Z | |
| dc.date.issued | 2004-10 | |
| dc.description | © 2004 American Institute of Physics. The electronic version of this article is the complete one and can be found at: http://dx.doi.org/10.1063/1.1805705 | en_US |
| dc.description | DOI: 10.1063/1.1805705 | en_US |
| dc.description.abstract | The properties of leaky surface acoustic waves (LSAW) in MBE grown AIN layer on Z-cut LiNbO₃ structures have been studied by numerical simulation and experimental measurements and compared with those of Rayleigh waves in the same structure. In the range of AIN layer thicknesses studied (0<kh<0.145) the measured velocity of LSAW propagating along the X axis of LiNbO3 substrate was essentially constant at around 4400 m∕s. The measured electromechanical coupling coefficients (K²) for the LSAW are roughly 1/4 of the predicted values, which might be due to the strong attenuation of the leaky wave unaccounted for during the parameter extraction. The thin AIN film slightly improved the measured temperature coefficient of frequency for the LSAW over that attained for the Z-cut, X-propagating LiNbO₃ substrate alone. | en_US |
| dc.identifier.citation | Bu, G. and Ciplys, D. and Shur, M.S. and Namkoong, G. and Doolittle, W.A .and Hunt, William D., "Leaky surface acoustic waves in Z-LiNbO3 substrates with epitaxial AlN overlays," Applied Physics Letters, 85, 15, 3313-3315 (October 11 2004) | en_US |
| dc.identifier.doi | 10.1063/1.1805705 | |
| dc.identifier.issn | 0003-6951 | |
| dc.identifier.uri | http://hdl.handle.net/1853/46784 | |
| dc.publisher | Georgia Institute of Technology | en_US |
| dc.publisher.original | American Institute of Physics | en_US |
| dc.subject | Aluminium compounds | en_US |
| dc.subject | Lithium compounds | en_US |
| dc.subject | III-V semiconductors | en_US |
| dc.subject | Wide band gap semiconductors | en_US |
| dc.subject | Molecular beam epitaxial growth | en_US |
| dc.subject | Semiconductor epitaxial layers | en_US |
| dc.subject | Piezoelectric materials | en_US |
| dc.subject | Surface acoustic waves | en_US |
| dc.subject | Rayleigh waves | en_US |
| dc.subject | Substrates | en_US |
| dc.subject | Numerical analysis | en_US |
| dc.subject | Semiconductor growth | en_US |
| dc.subject | Piezoelectricity | en_US |
| dc.title | Leaky surface acoustic waves in Z-LiNbO ₃ substrates with epitaxial AlN overlays | en_US |
| dc.type | Text | |
| dc.type.genre | Article | |
| dspace.entity.type | Publication | |
| local.contributor.author | Hunt, William D. | |
| local.contributor.author | Doolittle, William Alan | |
| local.contributor.corporatename | Center for Organic Photonics and Electronics | |
| relation.isAuthorOfPublication | 8dfe8c09-39f6-4895-9ac7-547efb52a173 | |
| relation.isAuthorOfPublication | a8907c5a-5af0-429f-895f-30c9de6f8c15 | |
| relation.isOrgUnitOfPublication | 43f8dc5f-0678-4f07-b44a-edbf587c338f |
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