Title:
ALN/ALSCN Acoustic Resonant Systems Based on Ultra-Thin Piezoelectric Films
ALN/ALSCN Acoustic Resonant Systems Based on Ultra-Thin Piezoelectric Films
Author(s)
Park, Mingyo
Advisor(s)
Ansari, Azadeh
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Abstract
The objective of this thesis is to introduce several advances into ultra-thin aluminum nitride/aluminum scandium nitride (AlN/AlScN) based acoustic resonant systems. Various microelectromechanical system (MEMS) acoustic resonators — surface acoustic wave (SAW), thin-film bulk acoustic resonator (FBAR), and Lamb wave resonators— were investigated by employing the ultra-thin piezoelectric films targeted for mobile filtering application toward the 5th generation (5G) millimeter wave bands. We approach our design considering the limitations of filter bandwidth and super high-frequency operation by marrying the advantages of highly-crystalline thin films with the piezoelectric boost from the addition of Sc to AlN alloys. This results in single-crystalline epitaxial AlScN films directly grown on Si substrate using molecular beam epitaxy (MBE). A critical performance metric of an acoustic resonator, Q×kt2 Figure of merit (FoM), is discussed with robust structures that overcome thin-film fabrication challenges. We propose resonator/filter design in future directions to fulfill the requirements for the compact radio frequency front-end (RFFE) filters towards the mm-wave frequency range.
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Date Issued
2022-08-26
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Text
Resource Subtype
Dissertation