Title:
Pareto Points in SRAM Design Using the Sleepy Stack Approach
Pareto Points in SRAM Design Using the Sleepy Stack Approach
| dc.contributor.author | Park, Jun Cheol | en_US |
| dc.contributor.author | Mooney, Vincent John, III | |
| dc.date.accessioned | 2005-06-17T17:34:50Z | |
| dc.date.available | 2005-06-17T17:34:50Z | |
| dc.date.issued | 2005 | en_US |
| dc.description.abstract | Leakage power consumption of current CMOS technology is already a great challenge. ITRS projects that leakage power consumption may come to dominate total chip power consumption as the technology feature size shrinks. Leakage is a serious problem particularly for SRAM which occupies large transistor count in most state-of-the-art chip designs. We propose a novel ultra-low leakage SRAM design which we call "sleepy stack SRAM." Unlike many other previous approaches, sleepy stack SRAM can retain logic state during sleep mode, which is crucial for a memory element. Compared to the best alternative we could find, a 6T SRAM cell with high-V[subscript th] transistors, the sleepy stack SRAM cell with 1.5xV[subscript th] at 110-degree C achieves more than 5X leakage power reduction at a cost of 31% delay increase and 113% area increase. Alternatively, by widening wordline pass transistors, the sleepy stack SRAM cell can match the delay of the high-V[subscript th] 6T SRAM and still achieve 2.5X leakage power reduction at a cost of a 139% area penalty. | en_US |
| dc.format.extent | 198992 bytes | |
| dc.format.mimetype | application/pdf | |
| dc.identifier.uri | http://hdl.handle.net/1853/6482 | |
| dc.language.iso | en_US | |
| dc.publisher | Georgia Institute of Technology | en_US |
| dc.relation.ispartofseries | CC Technical Report; GIT-CC-05-06 | en_US |
| dc.subject | Metal oxide semiconductors, Complementary | |
| dc.subject | Leakage power consumption | |
| dc.subject | Sleepy stack SRAM cell | |
| dc.subject | Pareto points | |
| dc.title | Pareto Points in SRAM Design Using the Sleepy Stack Approach | en_US |
| dc.type | Text | |
| dc.type.genre | Technical Report | |
| dspace.entity.type | Publication | |
| local.contributor.author | Mooney, Vincent John, III | |
| local.contributor.corporatename | College of Computing | |
| local.relation.ispartofseries | College of Computing Technical Report Series | |
| relation.isAuthorOfPublication | 1068070d-f7e9-4b9c-9be6-72023d13e2a1 | |
| relation.isOrgUnitOfPublication | c8892b3c-8db6-4b7b-a33a-1b67f7db2021 | |
| relation.isSeriesOfPublication | 35c9e8fc-dd67-4201-b1d5-016381ef65b8 |
Files
Original bundle
1 - 1 of 1