Title:
Operation of silicon-germanium heterojunction bipolar transistors on silicon-on-insulator in extreme environments

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dc.contributor.advisor Cressler, John D.
dc.contributor.author Bellini, Marco en_US
dc.contributor.committeeMember Papapolymerou, John
dc.contributor.committeeMember Ralph, Stephen
dc.contributor.committeeMember Shen, Shyh-Chiang
dc.contributor.committeeMember Zhou, Hao Min
dc.contributor.department Electrical and Computer Engineering en_US
dc.date.accessioned 2009-06-08T19:28:23Z
dc.date.available 2009-06-08T19:28:23Z
dc.date.issued 2009-03-02 en_US
dc.description.abstract Recently, several SiGe HBT devices fabricated on CMOS-compatible silicon on insulator (SOI) substrates (SiGe HBTs-on-SOI) have been demonstrated, combining the well-known SiGe HBT performance with the advantages of SOI substrates. These new devices are especially interesting in the context of extreme environments - highly challenging surroundings that lie outside commercial and even military electronics specifications. However, fabricating HBTs on SOI substrates instead of traditional silicon bulk substrates requires extensive modifications to the structure of the transistors and results in significant trade-offs. The present work investigates, with measurements and TCAD simulations, the performance and reliability of SiGe heterojunction bipolar transistors fabricated on silicon on insulator substrates with respect to operation in extreme environments such as at extremely low or extremely high temperatures or in the presence of radiation (both in terms of total ionizing dose and single effect upset). en_US
dc.description.degree Ph.D. en_US
dc.identifier.uri http://hdl.handle.net/1853/28206
dc.publisher Georgia Institute of Technology en_US
dc.subject SiGe en_US
dc.subject Extreme environments en_US
dc.subject HBT-on-SOI en_US
dc.subject Heterojunction bipolar transistor en_US
dc.subject Silicon germanium en_US
dc.subject TCAD en_US
dc.subject.lcsh Heterojunctions
dc.subject.lcsh Bipolar transistors
dc.subject.lcsh Silicon compounds
dc.subject.lcsh Germanium
dc.subject.lcsh Extreme environments
dc.subject.lcsh Silicon-on-insulator technology
dc.title Operation of silicon-germanium heterojunction bipolar transistors on silicon-on-insulator in extreme environments en_US
dc.type Text
dc.type.genre Dissertation
dspace.entity.type Publication
local.contributor.advisor Cressler, John D.
local.contributor.corporatename School of Electrical and Computer Engineering
local.contributor.corporatename College of Engineering
relation.isAdvisorOfPublication 2df1dcb5-f1ce-4e65-a1eb-021f8a8ab8bc
relation.isOrgUnitOfPublication 5b7adef2-447c-4270-b9fc-846bd76f80f2
relation.isOrgUnitOfPublication 7c022d60-21d5-497c-b552-95e489a06569
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