Title:
Manganese-induced long-range lattice disorder and vacancy formation in metal-organic chemical vapor deposition grown and ion-implanted Ga₁₋ₓMnₓN

dc.contributor.author Fenwick, William E.
dc.contributor.author Asghar, Ali
dc.contributor.author Gupta, Shalini
dc.contributor.author Kang, Hun
dc.contributor.author Strassburg, Martin
dc.contributor.author Dietz, Nikolaus
dc.contributor.author Graham, Samuel
dc.contributor.author Kane, Matthew Hartmann
dc.contributor.author Ferguson, Ian T.
dc.contributor.corporatename Georgia Institute of Technology. Center for Organic Photonics and Electronics en_US
dc.contributor.corporatename Georgia Institute of Technology. School of Electrical and Computer Engineering en_US
dc.contributor.corporatename Georgia Institute of Technology. School of Materials Science and Engineering en_US
dc.contributor.corporatename Georgia Institute of Technology. School of Mechanical Engineering en_US
dc.contributor.corporatename Georgia State University. Dept. of Physics and Astronomy en_US
dc.date.accessioned 2013-04-17T17:54:36Z
dc.date.available 2013-04-17T17:54:36Z
dc.date.issued 2006-07
dc.description © 2006 American Vacuum Society. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Vacuum Society. The electronic version of this article is the complete one and can be found at: http://dx.doi.org/10.1116/1.2201052 en_US
dc.description DOI: 10.1116/1.2201052
dc.description.abstract The structural properties and lattice dynamics of Ga₁₋ₓMnₓN were studied for Mn concentrations from 0.0% to 1.5%. Ga₁₋ₓMnₓN layers were fabricated by either Mn incorporation during the metal-organic chemical vapor deposition (MOCVD) growth process or by postgrowth ion implantation into MOCVD-grown GaN epilayers. The crystalline integrity and the absence of major second phase contributions were confirmed by high-resolution x-ray diffraction analysis. Raman spectroscopy showed that increased Mn incorporation in the epilayers significantly affected long-range lattice ordering, revealing a disorder-induced mode at 300 cm⁻¹ and a local vibrational mode at 669 cm⁻¹. The low intensities of both modes were shown to scale with Mn concentration. These observations support the formation of nitrogen vacancies, even under optimized MOCVD growth conditions. The slight excess of metal components in the growth process compared to undoped GaN growth and the incorporation of Mn deep acceptor levels favors the formation of nitrogen vacancies relative to undoped GaN. Such vacancies form shallow donor complexes and thus contribute to self-compensation. Electronic defects such as these may be detrimental to the ferromagnetic ordering process. en_US
dc.embargo.terms null en_US
dc.identifier.citation Fenwick, William E.; Asghar, Ali; Gupta, Shalini; Kang, Hun; Strassburg, Martin; Dietz, Nikolaus; Graham, Samuel; Kane, Matthew H.; and Ferguson, Ian T., "Manganese-induced long-range lattice disorder and vacancy formation in metal-organic chemical vapor deposition grown and ion-implanted Ga1-xMnxN," Journal of Vacuum Science & Technology A, Vol. 24, no.4, pp.1640,1643, (July 2006). en_US
dc.identifier.doi 10.1116/1.2201052
dc.identifier.issn 0734-2101 (print)
dc.identifier.uri http://hdl.handle.net/1853/46796
dc.language.iso en_US en_US
dc.publisher Georgia Institute of Technology en_US
dc.publisher.original American Vacuum Society
dc.subject Ferromagnetic en_US
dc.subject Lattice dynamics en_US
dc.subject MOCVD en_US
dc.subject Raman spectra en_US
dc.subject X-ray diffraction en_US
dc.title Manganese-induced long-range lattice disorder and vacancy formation in metal-organic chemical vapor deposition grown and ion-implanted Ga₁₋ₓMnₓN en_US
dc.type Text
dc.type.genre Article
dspace.entity.type Publication
local.contributor.author Graham, Samuel
local.contributor.corporatename Center for Organic Photonics and Electronics
relation.isAuthorOfPublication cf62405d-2133-40a8-b046-bce4a3443381
relation.isOrgUnitOfPublication 43f8dc5f-0678-4f07-b44a-edbf587c338f
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