Title:
Manganese-induced long-range lattice disorder and vacancy formation in metal-organic chemical vapor deposition grown and ion-implanted Ga₁₋ₓMnₓN
Manganese-induced long-range lattice disorder and vacancy formation in metal-organic chemical vapor deposition grown and ion-implanted Ga₁₋ₓMnₓN
dc.contributor.author | Fenwick, William E. | |
dc.contributor.author | Asghar, Ali | |
dc.contributor.author | Gupta, Shalini | |
dc.contributor.author | Kang, Hun | |
dc.contributor.author | Strassburg, Martin | |
dc.contributor.author | Dietz, Nikolaus | |
dc.contributor.author | Graham, Samuel | |
dc.contributor.author | Kane, Matthew Hartmann | |
dc.contributor.author | Ferguson, Ian T. | |
dc.contributor.corporatename | Georgia Institute of Technology. Center for Organic Photonics and Electronics | en_US |
dc.contributor.corporatename | Georgia Institute of Technology. School of Electrical and Computer Engineering | en_US |
dc.contributor.corporatename | Georgia Institute of Technology. School of Materials Science and Engineering | en_US |
dc.contributor.corporatename | Georgia Institute of Technology. School of Mechanical Engineering | en_US |
dc.contributor.corporatename | Georgia State University. Dept. of Physics and Astronomy | en_US |
dc.date.accessioned | 2013-04-17T17:54:36Z | |
dc.date.available | 2013-04-17T17:54:36Z | |
dc.date.issued | 2006-07 | |
dc.description | © 2006 American Vacuum Society. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Vacuum Society. The electronic version of this article is the complete one and can be found at: http://dx.doi.org/10.1116/1.2201052 | en_US |
dc.description | DOI: 10.1116/1.2201052 | |
dc.description.abstract | The structural properties and lattice dynamics of Ga₁₋ₓMnₓN were studied for Mn concentrations from 0.0% to 1.5%. Ga₁₋ₓMnₓN layers were fabricated by either Mn incorporation during the metal-organic chemical vapor deposition (MOCVD) growth process or by postgrowth ion implantation into MOCVD-grown GaN epilayers. The crystalline integrity and the absence of major second phase contributions were confirmed by high-resolution x-ray diffraction analysis. Raman spectroscopy showed that increased Mn incorporation in the epilayers significantly affected long-range lattice ordering, revealing a disorder-induced mode at 300 cm⁻¹ and a local vibrational mode at 669 cm⁻¹. The low intensities of both modes were shown to scale with Mn concentration. These observations support the formation of nitrogen vacancies, even under optimized MOCVD growth conditions. The slight excess of metal components in the growth process compared to undoped GaN growth and the incorporation of Mn deep acceptor levels favors the formation of nitrogen vacancies relative to undoped GaN. Such vacancies form shallow donor complexes and thus contribute to self-compensation. Electronic defects such as these may be detrimental to the ferromagnetic ordering process. | en_US |
dc.embargo.terms | null | en_US |
dc.identifier.citation | Fenwick, William E.; Asghar, Ali; Gupta, Shalini; Kang, Hun; Strassburg, Martin; Dietz, Nikolaus; Graham, Samuel; Kane, Matthew H.; and Ferguson, Ian T., "Manganese-induced long-range lattice disorder and vacancy formation in metal-organic chemical vapor deposition grown and ion-implanted Ga1-xMnxN," Journal of Vacuum Science & Technology A, Vol. 24, no.4, pp.1640,1643, (July 2006). | en_US |
dc.identifier.doi | 10.1116/1.2201052 | |
dc.identifier.issn | 0734-2101 (print) | |
dc.identifier.uri | http://hdl.handle.net/1853/46796 | |
dc.language.iso | en_US | en_US |
dc.publisher | Georgia Institute of Technology | en_US |
dc.publisher.original | American Vacuum Society | |
dc.subject | Ferromagnetic | en_US |
dc.subject | Lattice dynamics | en_US |
dc.subject | MOCVD | en_US |
dc.subject | Raman spectra | en_US |
dc.subject | X-ray diffraction | en_US |
dc.title | Manganese-induced long-range lattice disorder and vacancy formation in metal-organic chemical vapor deposition grown and ion-implanted Ga₁₋ₓMnₓN | en_US |
dc.type | Text | |
dc.type.genre | Article | |
dspace.entity.type | Publication | |
local.contributor.author | Graham, Samuel | |
local.contributor.corporatename | Center for Organic Photonics and Electronics | |
relation.isAuthorOfPublication | cf62405d-2133-40a8-b046-bce4a3443381 | |
relation.isOrgUnitOfPublication | 43f8dc5f-0678-4f07-b44a-edbf587c338f |