Title:
DENSE 3D HETEROGENEOUS INTEGRATION USING SELECTIVE COBALT ALD DEPOSITION AND RECONSTITUTED TIERS

dc.contributor.advisor Bakir, Muhannad S.
dc.contributor.author Li, Ming Jui
dc.contributor.committeeMember Brand, Oliver
dc.contributor.committeeMember Yu, Shimeng
dc.contributor.department Electrical and Computer Engineering
dc.date.accessioned 2021-09-15T15:50:19Z
dc.date.available 2021-09-15T15:50:19Z
dc.date.created 2021-08
dc.date.issued 2021-07-29
dc.date.submitted August 2021
dc.date.updated 2021-09-15T15:50:19Z
dc.description.abstract In this thesis, a new fine-pitch low-temperature bonding technology using selective Cobalt (Co) ALD deposition is presented. The benefits of selective Co ALD bonding are nanometer-scale controllability, low planarity requirement, low bonding temperature (200 oC) and potential for ultra-high-density bonds. To demonstrate selective Co ALD bonding, a Cu/Gap/Cu three-layered structure, which emulates 3D ICs stacking, is fabricated and carefully characterized. The testbed shows seamless Co interconnection between the Cu pads after Co ALD deposition for 1000 cycles. The electrical measurements demonstrate over 90% yield, which prove the Co connectivity between the Cu pads. Moreover, in this thesis, a new type of SiO2-reconstituted-tier stacking technology is proposed. The SiO2-reconstituted-tier stacking technology utilizes low-temperature ICP- PECVD SiO2 to encapsulate multi-sized chiplets. After ICP-PECVD SiO2 encapsulation, the through-oxide-vias and the pads are formed on the SiO2 to complete the reconstituted tier before stacking. Compared with conventional epoxy-molding-compound-based stacking, the SiO2 approach can have smaller loss tangent (10x), lower CTE mismatch (3x) and the higher via density (>400x). The thickness of the proposed technology can be over 10 times smaller than conventional epoxy molding. The two technologies, with further analysis and studies, open up exciting new opportunities for future 3D IC heterogeneous integration.
dc.description.degree M.S.
dc.format.mimetype application/pdf
dc.identifier.uri http://hdl.handle.net/1853/65112
dc.language.iso en_US
dc.publisher Georgia Institute of Technology
dc.subject Selective Cobalt ALD Bonding 3D Heterogeneous Integration Advanced Packaging SiO2 Reconstituted Tier
dc.title DENSE 3D HETEROGENEOUS INTEGRATION USING SELECTIVE COBALT ALD DEPOSITION AND RECONSTITUTED TIERS
dc.type Text
dc.type.genre Thesis
dspace.entity.type Publication
local.contributor.advisor Bakir, Muhannad S.
local.contributor.corporatename School of Electrical and Computer Engineering
local.contributor.corporatename College of Engineering
relation.isAdvisorOfPublication 752d9ed4-97ec-4a80-9920-4b4d3e762de1
relation.isOrgUnitOfPublication 5b7adef2-447c-4270-b9fc-846bd76f80f2
relation.isOrgUnitOfPublication 7c022d60-21d5-497c-b552-95e489a06569
thesis.degree.level Masters
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