Title:
Reliability of SiGe HBTs for extreme environment and RF applications

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dc.contributor.advisor Cressler, John D.
dc.contributor.author Cheng, Peng en_US
dc.contributor.committeeMember Chen, Xu-Yan
dc.contributor.committeeMember Milor, Linda
dc.contributor.committeeMember Papapolymerou, John
dc.contributor.committeeMember Shen, Shyh-Chiang
dc.contributor.department Electrical and Computer Engineering en_US
dc.date.accessioned 2012-02-17T19:21:55Z
dc.date.available 2012-02-17T19:21:55Z
dc.date.issued 2010-11-17 en_US
dc.description.abstract The objective of the proposed research is to characterize the safe-operating-area of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) under radiofrequency (RF) operation and extreme environments. The degradation of SiGe HBTs due to mixed-mode DC and RF stress has been modeled for the first time. State-of-the-art 200 GHz SiGe HBTs were first characterized, and then DC and RF stressed. Excess base leakage current was modeled as a function of the stress current and voltage. This physics-based stress model was then designed as a sub-circuit in Cadence, and incorporated into SiGe power amplifier design to predict the DC and RF stress-induced excess base current. Based on these studies, characterization of RF safe-operating-area for SiGe HBTs using devices and circuits is proposed. en_US
dc.description.degree PhD en_US
dc.identifier.uri http://hdl.handle.net/1853/42836
dc.publisher Georgia Institute of Technology en_US
dc.subject Extreme environment en_US
dc.subject SiGe HBTs en_US
dc.subject RF en_US
dc.subject Power amplifier en_US
dc.subject.lcsh Bipolar transistors
dc.subject.lcsh Heterojunctions
dc.subject.lcsh Semiconductors
dc.subject.lcsh Silicones
dc.subject.lcsh Germanium
dc.subject.lcsh Transistors
dc.title Reliability of SiGe HBTs for extreme environment and RF applications en_US
dc.type Text
dc.type.genre Dissertation
dspace.entity.type Publication
local.contributor.advisor Cressler, John D.
local.contributor.corporatename School of Electrical and Computer Engineering
local.contributor.corporatename College of Engineering
relation.isAdvisorOfPublication 2df1dcb5-f1ce-4e65-a1eb-021f8a8ab8bc
relation.isOrgUnitOfPublication 5b7adef2-447c-4270-b9fc-846bd76f80f2
relation.isOrgUnitOfPublication 7c022d60-21d5-497c-b552-95e489a06569
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