Title:
Radio frequency circuit design and packaging for silicon-germanium hetrojunction bipolar technology.

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dc.contributor.advisor Cressler, John D.
dc.contributor.author Poh, Chung Hang en_US
dc.contributor.committeeMember Laskar, Joy
dc.contributor.committeeMember Papapolymerou, John
dc.contributor.department Electrical and Computer Engineering en_US
dc.date.accessioned 2010-01-29T19:38:01Z
dc.date.available 2010-01-29T19:38:01Z
dc.date.issued 2009-11-09 en_US
dc.description.abstract The objective of this thesis is to design RF circuits using silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) for communication system. The packaging effect for the SiGe chip using liquid crystal polymer (LCP) is presented and methodology to derive the model for the package is discussed. Chapter 1, we discuss the overview and benefits of SiGe HBT technology in high frequency circuit design. Chapter 2 presents the methodology of the low noise amplifier (LNA) design and discusses the trade-off between the noise and gain matching. The technique for achieving simultaneous noise and gain matching for the LNA is also presented. Chapter 3 presents an L-band cascaded feedback SiGe low noise amplifier (LNA) design for use in Global Position System (GPS) receivers. Implemented in a 200 GHz SiGe BiCMOS technology, the LNA occupies 1 x 1 millimeter square (including the bondpads). The SiGe LNA exhibits a gain greater than 23 dB from 1.1 to 2.0 GHz, and a noise figure of 2.7 to 3.3 dB from 1.2 to 2.4 GHz. At 1.575 GHz, the 1-dB compression point (P1dB) is 1.73 dBm, with an input third-order intercept point (IIP3) of -3.98 dBm. Lastly, Chapter 4 covers the packaging techniques for the SiGe monolithic integrated circuit (MMIC). We present the modeling of a liquid crystal polymer (LCP) package for use with an X-band SiGe HBT Low Noise Amplifier (LNA). The package consists of a 2 mil LCP laminated over an embedded SiGe LNA, with vias in the LCP serving as interconnects to the LNA bondpads. An accurate model for the packaging interconnects has been developed and verified by comparing to measurement results, and can be used in chip/package co-design. en_US
dc.description.degree M.S. en_US
dc.identifier.uri http://hdl.handle.net/1853/31662
dc.publisher Georgia Institute of Technology en_US
dc.subject Packaging en_US
dc.subject RF en_US
dc.subject LNA en_US
dc.subject LCP en_US
dc.subject SiGe en_US
dc.subject.lcsh Bipolar transistors
dc.subject.lcsh Heterojunctions
dc.subject.lcsh Polymer liquid crystals
dc.subject.lcsh Radio frequency integrated circuits
dc.title Radio frequency circuit design and packaging for silicon-germanium hetrojunction bipolar technology. en_US
dc.type Text
dc.type.genre Thesis
dspace.entity.type Publication
local.contributor.advisor Cressler, John D.
local.contributor.corporatename School of Electrical and Computer Engineering
local.contributor.corporatename College of Engineering
relation.isAdvisorOfPublication 2df1dcb5-f1ce-4e65-a1eb-021f8a8ab8bc
relation.isOrgUnitOfPublication 5b7adef2-447c-4270-b9fc-846bd76f80f2
relation.isOrgUnitOfPublication 7c022d60-21d5-497c-b552-95e489a06569
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