Title:
Design and fabrication of nitride-based solar cells and integration for tandem cell
Design and fabrication of nitride-based solar cells and integration for tandem cell
dc.contributor.advisor | Ougazzaden, Abdallah | |
dc.contributor.advisor | Salvestrini, Jean-Paul | |
dc.contributor.author | Ayari, Taha | |
dc.contributor.committeeMember | Voss, Paul | |
dc.contributor.committeeMember | Adibi, Ali | |
dc.contributor.committeeMember | Sanders, Thomas | |
dc.contributor.department | Electrical and Computer Engineering | |
dc.date.accessioned | 2019-08-21T13:49:59Z | |
dc.date.available | 2019-08-21T13:49:59Z | |
dc.date.created | 2018-08 | |
dc.date.issued | 2018-07-26 | |
dc.date.submitted | August 2018 | |
dc.date.updated | 2019-08-21T13:49:59Z | |
dc.description.abstract | A practical III-nitride (III-N) photovoltaic (PV) application consists of transfer to a foreign substrate with enhanced functionality and/or integration with mature group IV or III-V based solar cell technologies. This requires a lift-off technique compatible with good quality III-N materials, with photovoltaic device fabrication and with subsequent bonding on a heterogeneous substrate. This thesis work demonstrates unprecedented InGaN-based solar cells on 2-inch h-BN/sapphire wafer and their transfer to glass with a backside reflector. III-N solar cells with various sizes and designs are processed and characterized on a full 2-inch wafer giving performances comparable to similar devices on sapphire. The subsequent crack-free transfer of the solar cells, enabled by Van der Waal bonded 2D layered h-BN, to a substrate with a backside reflector yields an increase in the short circuit current density of up to 20%. This demonstration of transferred InGaN-based solar cells on foreign substrates while increasing performance represents a major advance toward lightweight, low cost and high efficiency photovoltaic applications. | |
dc.description.degree | Ph.D. | |
dc.format.mimetype | application/pdf | |
dc.identifier.uri | http://hdl.handle.net/1853/61659 | |
dc.language.iso | en_US | |
dc.publisher | Georgia Institute of Technology | |
dc.subject | InGaN solar cell | |
dc.subject | Hybrid integration | |
dc.title | Design and fabrication of nitride-based solar cells and integration for tandem cell | |
dc.type | Text | |
dc.type.genre | Dissertation | |
dspace.entity.type | Publication | |
local.contributor.advisor | Ougazzaden, Abdallah | |
local.contributor.advisor | Salvestrini, Jean-Paul | |
local.contributor.corporatename | School of Electrical and Computer Engineering | |
local.contributor.corporatename | College of Engineering | |
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relation.isAdvisorOfPublication | 083368ba-1eb5-47a2-b8a8-e9f8304ee3e4 | |
relation.isOrgUnitOfPublication | 5b7adef2-447c-4270-b9fc-846bd76f80f2 | |
relation.isOrgUnitOfPublication | 7c022d60-21d5-497c-b552-95e489a06569 | |
thesis.degree.level | Doctoral |