Title:
Design and integration of hybrid and monolithic microwave power amplifiers for wideband applications using gallium nitride technology

dc.contributor.advisor Papapolymerou, John
dc.contributor.author Barisich, George Christopher
dc.contributor.committeeMember Gebara, Edward
dc.contributor.committeeMember Cressler, John
dc.contributor.committeeMember Wang, Hua
dc.contributor.committeeMember Zhang, John
dc.contributor.department Electrical and Computer Engineering
dc.date.accessioned 2019-01-16T17:19:56Z
dc.date.available 2019-01-16T17:19:56Z
dc.date.created 2017-12
dc.date.issued 2017-08-28
dc.date.submitted December 2017
dc.date.updated 2019-01-16T17:19:56Z
dc.description.abstract The objective of this research is to compare and advance the predominant methods of realizing broadband microwave power amplifiers (PAs) up to 40 GHz with high efficiency using gallium nitride (GaN) technology. The studied architectures are based on the reactive/resistive matching approach and the traveling wave technique in both hybrid and monolithic microwave integrated circuits (MMICs). Important details of design development and integration are discussed, featuring discrete component descriptions, substrate material selections, additional matching techniques, and comparisons of both wirebonds and flip-chip bonds that are used for PA interconnections. With a focus on bandwidth enhancements and efficiency improvements, the presented hybrid PA designs achieve state of the art performance with commercially-available GaN power transistors. This part of the work demonstrates the highest power added efficiency (27–48%) and widest bandwidth (1.0-11.5 GHz) for a multi watt hybrid PA implementation. To complement these novel hybrid PA designs and integration developments, broadband MMIC PAs were designed at higher frequencies. The results of device characterization and wideband modeling are presented for a new 0.15 µm GaN process in support of a 3 stage broadband MMIC PA design with reactive/resistive matching. Lastly, an ultra-wideband non-uniform distributed PA design is fabricated on a pre-release version of a new 0.14 µm GaN process. For the first time, a GaN MMIC PA with output power greater than 1 W and nearly 10% power added efficiency was successfully achieved from 2 to 40 GHz, surpassing previously reported results.
dc.description.degree Ph.D.
dc.format.mimetype application/pdf
dc.identifier.uri http://hdl.handle.net/1853/60671
dc.language.iso en_US
dc.publisher Georgia Institute of Technology
dc.subject Power amplifier
dc.subject Gallium nitride
dc.subject Broadband
dc.subject MMIC
dc.subject Hybrid
dc.subject Microwave
dc.title Design and integration of hybrid and monolithic microwave power amplifiers for wideband applications using gallium nitride technology
dc.type Text
dc.type.genre Dissertation
dspace.entity.type Publication
local.contributor.corporatename School of Electrical and Computer Engineering
local.contributor.corporatename College of Engineering
relation.isOrgUnitOfPublication 5b7adef2-447c-4270-b9fc-846bd76f80f2
relation.isOrgUnitOfPublication 7c022d60-21d5-497c-b552-95e489a06569
thesis.degree.level Doctoral
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