Title:
Predictive modeling of device and circuit reliability in highly scaled CMOS and SiGe BiCMOS technology

dc.contributor.advisor Cressler, John D.
dc.contributor.author Moen, Kurt Andrew en_US
dc.contributor.committeeMember Citrin, David
dc.contributor.committeeMember Fekri, Faramarz
dc.contributor.committeeMember Graham, Samuel
dc.contributor.committeeMember Shen, Shyh-Chiang
dc.contributor.department Electrical and Computer Engineering en_US
dc.date.accessioned 2012-09-20T18:12:12Z
dc.date.available 2012-09-20T18:12:12Z
dc.date.issued 2012-04-13 en_US
dc.description.abstract The advent of high-frequency silicon-based technologies has enabled the design of mixed-signal circuits that incorporate analog, RF, and digital circuit components to build cost-effective system-on-a-chip solutions. Emerging applications provide great incentive for continued scaling of transistor performance, requiring careful attention to mismatch, noise, and reliability concerns. If these mixed-signal technologies are to be employed within space-based electronic systems, they must also demonstrate reliability in radiation-rich environments. SiGe BiCMOS technology in particular is positioned as an excellent candidate to satisfy all of these requirements. The objective of this research is to develop predictive modeling tools that can be used to design new mixed-signal technologies and assess their reliability on Earth and in extreme environments. Ultimately, the goal is to illuminate the interaction of device- and circuit-level reliability mechanisms and establish best practices for modeling these effects in modern circuits. To support this objective, several specific areas have been targeted first, including a TCAD-based approach to identify performance-limiting regions in SiGe HBTs, measurement and modeling of carrier transport parameters that are essential for predictive TCAD, and measurement of device-level single-event transients to better understand the physical origins and implications for device design. These tasks provide the foundation for the bulk of this research, which addresses circuit-level reliability challenges through the application of novel mixed-mode TCAD techniques. All of the individual tasks are tied together by a guiding theme: to develop a holistic understanding of the challenges faced by emerging broadband technologies by coordinating results from material, device, and circuit studies. en_US
dc.description.degree PhD en_US
dc.identifier.uri http://hdl.handle.net/1853/44700
dc.publisher Georgia Institute of Technology en_US
dc.subject Reliability en_US
dc.subject SiGe HBT en_US
dc.subject Radiation effects en_US
dc.subject Semiconductor devices en_US
dc.subject.lcsh Metal oxide semiconductors, Complementary
dc.subject.lcsh Silicon
dc.subject.lcsh Mixed signal circuits
dc.title Predictive modeling of device and circuit reliability in highly scaled CMOS and SiGe BiCMOS technology en_US
dc.type Text
dc.type.genre Dissertation
dspace.entity.type Publication
local.contributor.advisor Cressler, John D.
local.contributor.corporatename School of Electrical and Computer Engineering
local.contributor.corporatename College of Engineering
relation.isAdvisorOfPublication 2df1dcb5-f1ce-4e65-a1eb-021f8a8ab8bc
relation.isOrgUnitOfPublication 5b7adef2-447c-4270-b9fc-846bd76f80f2
relation.isOrgUnitOfPublication 7c022d60-21d5-497c-b552-95e489a06569
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