Title:
Transparent organic field-effect transistors with polymeric source and drain electrodes fabricated by inkjet printing
Transparent organic field-effect transistors with polymeric source and drain electrodes fabricated by inkjet printing
| dc.contributor.author | Zhang, Xiaohong | en_US |
| dc.contributor.author | Lee, S. M. | en_US |
| dc.contributor.author | Domercq, Benoit | en_US |
| dc.contributor.author | Kippelen, Bernard | en_US |
| dc.contributor.corporatename | Georgia Institute of Technology. Center for Organic Photonics and Electronics | en_US |
| dc.contributor.corporatename | Georgia Institute of Technology. School of Electrical and Computer Engineering | en_US |
| dc.date.accessioned | 2012-12-14T14:52:42Z | |
| dc.date.available | 2012-12-14T14:52:42Z | |
| dc.date.issued | 2008-06-16 | |
| dc.description | © 2008 American Institute of Physics. The electronic version of this article is the complete one and can be found at: http://dx.doi.org/10.1063/1.2940232 | en_US |
| dc.description | DOI: 10.1063/1.2940232 | en_US |
| dc.description.abstract | Transparent organic field-effect transistors based on pentacene were fabricated on indium tin oxide (ITO)-coated glass using ITO as the gate electrode, Al2O3 grown by atomic layer deposition as the gate insulator, and an inkjet-printed conducting polymer poly(3,4-ethylenedioxythiophene):poly(4-styrenesulphonate) as the source and drain electrodes. The transistors combine an overall high transmittance (84% in the channel and 78% through source/drain electrodes) in the visible region, a field-effect mobility value of 0.3 cm2/V s, a threshold voltage of -0.2 V, a subthreshold slope of 0.9 V/decade, and an on/off current ratio of 105. | en_US |
| dc.identifier.citation | Zhang, X. -H. and Lee, S. M. and Domercq, Benoit and Kippelen, Bernard, "Transparent organic field-effect transistors with polymeric source and drain electrodes fabricated by inkjet printing," Applied Physics Letters, 92, 24, 243307 (June 16 2008) | en_US |
| dc.identifier.doi | 10.1063/1.2940232 | |
| dc.identifier.issn | 1077-3118 | |
| dc.identifier.uri | http://hdl.handle.net/1853/45548 | |
| dc.language.iso | en_US | en_US |
| dc.publisher | Georgia Institute of Technology | en_US |
| dc.publisher.original | American Institute of Physics | en_US |
| dc.subject | Carrier mobility | en_US |
| dc.subject | Conducting polymers | en_US |
| dc.subject | Field effect transistors | en_US |
| dc.subject | Organic semiconductors | en_US |
| dc.subject | Transparency | en_US |
| dc.title | Transparent organic field-effect transistors with polymeric source and drain electrodes fabricated by inkjet printing | en_US |
| dc.type | Text | |
| dc.type.genre | Article | |
| dspace.entity.type | Publication | |
| local.contributor.author | Kippelen, Bernard | |
| local.contributor.corporatename | Center for Organic Photonics and Electronics | |
| relation.isAuthorOfPublication | 89dff3fa-f69f-48dc-a1b2-89e73be81537 | |
| relation.isOrgUnitOfPublication | 43f8dc5f-0678-4f07-b44a-edbf587c338f |
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