Title:
Transparent organic field-effect transistors with polymeric source and drain electrodes fabricated by inkjet printing
Transparent organic field-effect transistors with polymeric source and drain electrodes fabricated by inkjet printing
Files
Author(s)
Zhang, Xiaohong
Lee, S. M.
Domercq, Benoit
Kippelen, Bernard
Lee, S. M.
Domercq, Benoit
Kippelen, Bernard
Advisor(s)
Editor(s)
Collections
Supplementary to
Permanent Link
Abstract
Transparent organic field-effect transistors based on pentacene were fabricated on indium tin oxide (ITO)-coated glass using ITO as the gate electrode, Al2O3 grown by atomic layer deposition as the gate insulator, and an inkjet-printed conducting polymer poly(3,4-ethylenedioxythiophene):poly(4-styrenesulphonate) as the source and drain electrodes. The transistors combine an overall high transmittance (84% in the channel and 78% through source/drain electrodes) in the visible region, a field-effect mobility value of 0.3 cm2/V s, a threshold voltage of -0.2 V, a subthreshold slope of 0.9 V/decade, and an on/off current ratio of 105.
Sponsor
Date Issued
2008-06-16
Extent
Resource Type
Text
Resource Subtype
Article