Title:
The Edge States of Epitaxial Graphene on SiC
The Edge States of Epitaxial Graphene on SiC
dc.contributor.advisor | de Heer, Walter A. | |
dc.contributor.author | Hu, Yue | |
dc.contributor.committeeMember | Jiang, Zhigang | |
dc.contributor.committeeMember | First, Phillip | |
dc.contributor.committeeMember | Mourigal, Martin | |
dc.contributor.committeeMember | Khan, Asif | |
dc.contributor.department | Physics | |
dc.date.accessioned | 2022-01-14T16:12:43Z | |
dc.date.available | 2022-01-14T16:12:43Z | |
dc.date.created | 2021-12 | |
dc.date.issued | 2021-12-14 | |
dc.date.submitted | December 2021 | |
dc.date.updated | 2022-01-14T16:12:44Z | |
dc.description.abstract | Exceptional ballistic transport was observed in sidewall epitaxial graphene nanoribbons on SiC (SWGNRs) at room temperature. These objects are of fundamental interest as they provide a direct access to charge neutral graphene with excellent transport properties. In this thesis, beyond sidewalls, we fabricate epitaxial graphene devices on different crystal faces on SiC, including the Si-face and non-polar facets. We introduce novel fabrication process flows that have high temperature annealing and Al2O3 as a protective layer to reduce the edge roughness of ribbons and the contamination from resist residue. Then we discuss transport measurement results of graphene nanoribbons on Si-face as well as on non-polar SiC facets, which might reveal a ballistic edge state channel 0+ with mean free path on the order of 30um and another edge state channel activated by temperature. These special epitaxial graphene edge states are interesting from a fundamental physics standpoint and may find applications in future graphene electronic devices. | |
dc.description.degree | Ph.D. | |
dc.format.mimetype | application/pdf | |
dc.identifier.uri | http://hdl.handle.net/1853/66159 | |
dc.language.iso | en_US | |
dc.publisher | Georgia Institute of Technology | |
dc.subject | Graphene, Epitaxial Graphene, Semiconductor, Graphene Nanoribbon, Electrical Transport | |
dc.title | The Edge States of Epitaxial Graphene on SiC | |
dc.type | Text | |
dc.type.genre | Dissertation | |
dspace.entity.type | Publication | |
local.contributor.advisor | de Heer, Walter A. | |
local.contributor.corporatename | College of Sciences | |
local.contributor.corporatename | School of Physics | |
relation.isAdvisorOfPublication | 8ab28407-deb7-4b22-bb02-63fe30f19375 | |
relation.isOrgUnitOfPublication | 85042be6-2d68-4e07-b384-e1f908fae48a | |
relation.isOrgUnitOfPublication | 2ba39017-11f1-40f4-9bc5-66f17b8f1539 | |
thesis.degree.level | Doctoral |