Title:
Study of microstructure in SrTiO₃/Si by high-resolution transmission electron microscopy
Study of microstructure in SrTiO₃/Si by high-resolution transmission electron microscopy
Author(s)
Yang, G. Y.
Finder, J. M.
Wang, J.
Wang, Z. L. (Zhong Lin)
Yu, Z.
Ramdani, J.
Droopad, R.
Eisenbeiser, K. W.
Ramesh, R.
Finder, J. M.
Wang, J.
Wang, Z. L. (Zhong Lin)
Yu, Z.
Ramdani, J.
Droopad, R.
Eisenbeiser, K. W.
Ramesh, R.
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Abstract
Microstructure in the SrTiO₃/Si system has been studied using high-resolution transmission electron microscopy and image simulations. SrTiO₃ grows heteroepitaxially on Si with the orientation relationship given by (001)STO//(001)Si and [100]STO//[110]Si. The lattice misfit between the SrTiO₃ thin films and the Si substrate is accommodated by the presence of interfacial dislocations at the Si substrate side. The interface most likely consists of Si bonded to O in SrTiO₃. The alternative presentation of Sr and Si atoms along the interface leads to the formation of 2× and 3× Sr configurations. Structural defects in the SrTiO₃ thin film mainly consist of tilted domains and dislocations.
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2002-01
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