Title:
A Comprehensive Study of Safe-Operating-Area, Biasing Constraints, and Breakdown in Advanced SiGe HBTs
A Comprehensive Study of Safe-Operating-Area, Biasing Constraints, and Breakdown in Advanced SiGe HBTs
dc.contributor.advisor | Cressler, John D. | |
dc.contributor.author | Grens, Curtis M. | en_US |
dc.contributor.committeeMember | Emmanouil M. Tentzeris | |
dc.contributor.committeeMember | Papapolymerou, John | |
dc.contributor.department | Engineering | en_US |
dc.contributor.department | Electrical and Computer Engineering | |
dc.date.accessioned | 2005-09-16T15:00:36Z | |
dc.date.available | 2005-09-16T15:00:36Z | |
dc.date.issued | 2005-05-19 | en_US |
dc.description.abstract | This thesis presents a comprehensive assessment of breakdown and operational voltage constraints in state-of-the-art silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) BiCMOS technology. Technology scaling of SiGe HBTs for high frequency performance results on lower breakdown voltages, making operating voltage constraints an increasingly vital reliability consideration in SiGe HBTs from both a device and circuits perspective. | en_US |
dc.description.degree | M.S. | en_US |
dc.format.extent | 9886881 bytes | |
dc.format.mimetype | application/pdf | |
dc.identifier.uri | http://hdl.handle.net/1853/7124 | |
dc.language.iso | en_US | |
dc.publisher | Georgia Institute of Technology | en_US |
dc.subject | Impact ionization | en_US |
dc.subject | Avalanche multiplication | |
dc.subject | BVCBO | |
dc.subject | BVCEO | |
dc.subject | Breakdown | |
dc.subject | SiGe HBTs | |
dc.subject | BiCMOS | |
dc.title | A Comprehensive Study of Safe-Operating-Area, Biasing Constraints, and Breakdown in Advanced SiGe HBTs | en_US |
dc.type | Text | |
dc.type.genre | Thesis | |
dspace.entity.type | Publication | |
local.contributor.advisor | Cressler, John D. | |
local.contributor.corporatename | School of Electrical and Computer Engineering | |
local.contributor.corporatename | College of Engineering | |
relation.isAdvisorOfPublication | 2df1dcb5-f1ce-4e65-a1eb-021f8a8ab8bc | |
relation.isOrgUnitOfPublication | 5b7adef2-447c-4270-b9fc-846bd76f80f2 | |
relation.isOrgUnitOfPublication | 7c022d60-21d5-497c-b552-95e489a06569 |
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