Title:
A Comprehensive Study of Safe-Operating-Area, Biasing Constraints, and Breakdown in Advanced SiGe HBTs

dc.contributor.advisor Cressler, John D.
dc.contributor.author Grens, Curtis M. en_US
dc.contributor.committeeMember Emmanouil M. Tentzeris
dc.contributor.committeeMember Papapolymerou, John
dc.contributor.department Engineering en_US
dc.contributor.department Electrical and Computer Engineering
dc.date.accessioned 2005-09-16T15:00:36Z
dc.date.available 2005-09-16T15:00:36Z
dc.date.issued 2005-05-19 en_US
dc.description.abstract This thesis presents a comprehensive assessment of breakdown and operational voltage constraints in state-of-the-art silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) BiCMOS technology. Technology scaling of SiGe HBTs for high frequency performance results on lower breakdown voltages, making operating voltage constraints an increasingly vital reliability consideration in SiGe HBTs from both a device and circuits perspective. en_US
dc.description.degree M.S. en_US
dc.format.extent 9886881 bytes
dc.format.mimetype application/pdf
dc.identifier.uri http://hdl.handle.net/1853/7124
dc.language.iso en_US
dc.publisher Georgia Institute of Technology en_US
dc.subject Impact ionization en_US
dc.subject Avalanche multiplication
dc.subject BVCBO
dc.subject BVCEO
dc.subject Breakdown
dc.subject SiGe HBTs
dc.subject BiCMOS
dc.title A Comprehensive Study of Safe-Operating-Area, Biasing Constraints, and Breakdown in Advanced SiGe HBTs en_US
dc.type Text
dc.type.genre Thesis
dspace.entity.type Publication
local.contributor.advisor Cressler, John D.
local.contributor.corporatename School of Electrical and Computer Engineering
local.contributor.corporatename College of Engineering
relation.isAdvisorOfPublication 2df1dcb5-f1ce-4e65-a1eb-021f8a8ab8bc
relation.isOrgUnitOfPublication 5b7adef2-447c-4270-b9fc-846bd76f80f2
relation.isOrgUnitOfPublication 7c022d60-21d5-497c-b552-95e489a06569
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