A Comprehensive Study of Safe-Operating-Area, Biasing Constraints, and Breakdown in Advanced SiGe HBTs

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grens_curtis_m_200508_mast.pdf (9.43 MB)
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Grens, Curtis M.
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http://hdl.handle.net/1853/7124
Abstract
This thesis presents a comprehensive assessment of breakdown and operational voltage constraints in state-of-the-art silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) BiCMOS technology. Technology scaling of SiGe HBTs for high frequency performance results on lower breakdown voltages, making operating voltage constraints an increasingly vital reliability consideration in SiGe HBTs from both a device and circuits perspective.
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2005-05-19
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Thesis
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