Title:
A Comprehensive Study of Safe-Operating-Area, Biasing Constraints, and Breakdown in Advanced SiGe HBTs
A Comprehensive Study of Safe-Operating-Area, Biasing Constraints, and Breakdown in Advanced SiGe HBTs
Authors
Grens, Curtis M.
Authors
Advisors
Cressler, John D.
Advisors
Person
Associated Organizations
Organizational Unit
Organizational Unit
Series
Collections
Supplementary to
Permanent Link
Abstract
This thesis presents a comprehensive assessment of breakdown and operational voltage constraints in state-of-the-art silicon-germanium (SiGe)
heterojunction bipolar transistor (HBT) BiCMOS technology. Technology scaling of SiGe HBTs for high frequency performance
results on lower breakdown voltages, making operating voltage constraints an increasingly vital reliability consideration in SiGe HBTs from both a device and circuits perspective.
Sponsor
Date Issued
2005-05-19
Extent
9886881 bytes
Resource Type
Text
Resource Subtype
Thesis