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Mooney, Vincent John, III

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Author: Park, Jun Cheol ×

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    Pareto Points in SRAM Design Using the Sleepy Stack Approach
    (Georgia Institute of Technology, 2005) Park, Jun Cheol ; Mooney, Vincent John, III
    Leakage power consumption of current CMOS technology is already a great challenge. ITRS projects that leakage power consumption may come to dominate total chip power consumption as the technology feature size shrinks. Leakage is a serious problem particularly for SRAM which occupies large transistor count in most state-of-the-art chip designs. We propose a novel ultra-low leakage SRAM design which we call "sleepy stack SRAM." Unlike many other previous approaches, sleepy stack SRAM can retain logic state during sleep mode, which is crucial for a memory element. Compared to the best alternative we could find, a 6T SRAM cell with high-V[subscript th] transistors, the sleepy stack SRAM cell with 1.5xV[subscript th] at 110-degree C achieves more than 5X leakage power reduction at a cost of 31% delay increase and 113% area increase. Alternatively, by widening wordline pass transistors, the sleepy stack SRAM cell can match the delay of the high-V[subscript th] 6T SRAM and still achieve 2.5X leakage power reduction at a cost of a 139% area penalty.
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    Some Layouts Using the Sleepy Stack Approach
    (Georgia Institute of Technology, 2004) Pfeiffenberger, Philipp ; Park, Jun Cheol ; Mooney, Vincent John, III
    This technical report elaborates on the methodology and findings presented in “Sleepy Stack Reduction of Leakage Power” by J.C. Park, V. J. Mooney III and P. Pfeiffenberger [1]. The scope of this report includes test procedures and data on delay, dynamic and static power for all considered approaches and implementations as well as schematics and layouts for all considered approaches and implementations.
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    Golay and Wavelet Error Control Codes in VLSI
    (Georgia Institute of Technology, 2003) Balasundaram, Arunkumar ; Pereira, Angelo W. D. ; Park, Jun Cheol ; Mooney, Vincent John, III
    This technical report describes AGNI (meaning Fire in Sanskrit) – a VLSI chip to implement error control codes. The chip was initially conceived and designed as part of a Georgia Tech Cutting Edge Research Grant. However, this chip implementation of error control codes has been undertaken as a part of the ECE 6130 course taught in Spring 2002 by Dr. John Uyemura, Professor, Department of Electrical and Computer Engineering, Georgia Institute of Technology. Two coders have been implemented: a (12, 6, 4) wavelet encoder/decoder and a (24, 12, 8) golay encoder/decoder, where the (N, M, d) nomenclature stands for (N=encoded length, M=message length, d=hamming distance). These codes have a correctable limit of one bit error and three bit errors, respectively. The following section presents the encoding/decoding functionality of the chip in more detail. This project could potentially feed a future project to incorporate the chip into a System-ona- Package (SoP). It is expected that the chip would function as a high-speed error encoder/decoder for Radio Frequency (RF) applications.